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  fedr26v51253l-002-02 issue date: oct. 01, 2008 MR26V51253L 32m?word 16?bit or 64m?word 8?bit page mode p2rom features 33,554,432-word 16-bit / 67,108,864-word 8-bit electrically switchable configuration page size of 8-word x 16-bit or 16-word x 8-bit 3.0 v to 3.6 v power supply random access time 100 ns max page access time 35 ns max operating current 80 ma max standby current 5 ma max input/output ttl compatible three-state output packages MR26V51253L-xxxmb 70-pin plastic ssop (p-ssop70-500-0.80-ek-mc) p2rom advanced technology p2rom stands for production programmed rom. this exclusive lapis semiconductor technology utilizes factory test equipment for programming the customers code into the p2rom prior to final production testing. advancements in this technology allows production costs to be equivalent to maskrom and has many advantages and added benefits over the other non-volatile technologies, which include the following; a11 a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 a23 nc nc nc nc nc gnd nc nc nc nc nc byte# a0 d0 d8 d1 d9 vcc d2 d10 d3 d11 gnd ce# a12 a13 a14 a15 vcc a16 a17 a18 a19 a20 a21 nc nc nc nc nc gnd nc nc nc nc nc a22 a24 oe# d15/a-1 d7 d14 d6 d13 d5 d12 d4 70ssop 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 vcc pin configuration (top view) short lead time , since the p2rom is programmed at the final stage of the production process, a large p2rom inventory "bank system" of un-programmed packaged products are maintained to provide an aggressive lead-time and minimize liability as a custom product. no mask charge , since p2roms do not utilize a custom mask for storing customer code, no mask charges apply. no additional programming charge, unlike flash and otp that require additional programming and handling costs, the p2rom already has the code loaded at the factory with minimal effect on the production throughput. the cost is included in the unit price. custom marking is available at no additional charge. 1/ 8
fedr26v51253l-002-02 MR26V51253L / p2rom block diagram a0 a1 a2 a3 a4 a5 a6 a7 a8 a9 a10 a11 a12 a13 a14 a15 a16 a17 a18 a19 a20 a21 a22 a23 a24 ce# byte# oe# ce oe 8 / 16 switch d0 d2 d4 d6 d8 d10 d12 d14 d1 d3 d5 d7 d9 d11 d13 d15 memory cell matrix 32m 16-bit or 64m 8-bit multiplexer output buffer row decoder column decoder address buffer in 8-bit output mode, these pins are placed in a high-z state and pin d15 functions as the a-1 address pin. a?1 pin descriptions pin name functions d15 / a?1 data output / address input a0 to a24 address inputs d0 to d14 data outputs ce# chip enable input oe# output enable input byte# word / byte select input v cc power supply voltage v ss ground nc no connect 2/ 8
fedr26v51253l-002-02 MR26V51253L / p2rom function table mode ce# oe# byte# v cc d0 to d7 d8 to d14 d15/a?1 read (16-bit) l l h d out read (8-bit) l l l d out hi?z l/h h output disable l h l hi?z ? h standby h ? l 3.0 v to 3.6 v hi?z ? ? : don?t care (h or l) absolute maximum ratings parameter symbol condition value unit operating temperature under bias ta 0 to 70 c storage temperature tstg ? ?55 to 125 c input voltage v i ?0.5 to v cc +0.5 v output voltage v o ?0.5 to v cc +0.5 v power supply voltage v cc relative to v ss ?0.5 to 5 v power dissipation per package p d ta = 25c 1.0 w output short circuit current i os ? 10 ma recommended operating conditions (ta = 0 to 70c) parameter symbol condition min. typ. max. unit v cc power supply voltage v cc 3.0 ? 3.6 v input ?h? level v ih 2.2 ? v cc +0.5 ? v input ?l? level v il v cc = 3.0 to 3.6 v ?0.5 ?? ? 0.6 v voltage is relative to v ss . ? : vcc+1.5v(max.) when pulse width of overshoot is less than 10ns. ?? : -1.5v(min.) when pulse width of undershoot is less than 10ns. pin capacitance (v cc = 3.3 v, ta = 25c, f = 1 mhz) parameter symbol condition min. typ. max. unit input c in1 ? ? 16 byte# c in2 v i = 0 v ? ? 400 output c out v o = 0 v ? ? 20 pf 3/ 8
fedr26v51253l-002-02 MR26V51253L / p2rom electrical characteristics dc characteristics (v cc = 3.0 v to 3.6 v, ta = 0 to 70c) parameter symbol condition min. typ. max. unit input leakage current i li v i = 0 to v cc ? ? 10 a output leakage current i lo v o = 0 to v cc ? ? 10 a i ccsc ce# = v cc ? ? 5 ma v cc power supply current (standby) i ccst ce# = v ih ? ? 5 ma v cc power supply current (read) i cca1 ce# = v il , oe# = v ih f=5mhz ? ? 80 ma input ?h? level v ih ? 2.2 ? v cc +0.5 ? v input ?l? level v il ? ?0.5 ?? ? 0.6 v output ?h? level v oh i oh = ?1 ma 2.4 ? ? v output ?l? level v ol i ol = 2 ma ? ? 0.4 v voltage is relative to v ss . ? : vcc+1.5v(max.) when pulse width of overshoot is less than 10ns. ?? : -1.5v(min.) when pulse width of undershoot is less than 10ns. ac characteristics (v cc = 3.0 v to 3.6 v, ta = 0 to 70c) parameter symbol condition min. max. unit address cycle time t c ? 100 ? ns address access time t acc ce# = oe# = v il ? 100 ns page cycle time t pc ? 35 ? ns page access time t pac ? ? 35 ns ce# access time t ce oe# = v il ? 100 ns oe# access time t oe ce# = v il ? 30 ns t chz oe# = v il 0 20 ns output disable time t ohz ce# = v il 0 20 ns output hold time t oh ce# = oe# = v il 0 ? ns measurement conditions input signal level ---------------------------------- 0 v/3 v input timing reference level --------------------- 1/2vcc output load ----------------------------------------- 50 pf output timing reference level ------------------- 1/2vcc output load output 50 pf (incl uding scope and jig) 4/ 8
fedr26v51253l-002-02 MR26V51253L / p2rom timing chart (read cycle) random access mode read cycle address ce# oe# dout t c t ce t oe t oh t chz t ohz valid data hi-z hi-z t oh t acc valid data t acc t c page access mode read cycle a3 to a24 t c t ce t oe t acc t oh t chz t ohz hi-z hi-z dout t pac a-1 to a2 (byte mode) t pc t pc t pac a0 to a2 (word mode) ce# oe# 5/ 8
fedr26v51253l-002-02 MR26V51253L / p2rom package dimensions (unit: mm) no tes for mounting the surface mount type package the surface mount type packages are very susceptible to heat in reflow mounting and humidity absorbed in storage. therefore, before you perform reflow mounting, contact rohm s responsible sales person for the product name, package name, pin number, package code and desired mounting conditions (reflow method, temperature and times). 6/ 8
fedr26v51253l-002-02 MR26V51253L / p2rom revision history page document no. date previous edition current edition description fedr26v51253l-02-01 dec. 7, 2004 ? ? final edition 1 fedr26v51253l-02-02 apr.8, 2005 1,4 1,4 change t acc, t ce to 100ns from 120ns fedr26v51253l-002-02 oct.1, 2008 ? ? changed company logo and name to oki semiconductor 7/ 8
fedr26v51253l-002-02 MR26V51253L / p2rom 8/8 notice no copying or reproduction of this document, in part or in whole, is permitted without the consent of lapis semiconductor co., ltd. the content specified herein is subject to change for improvement without notice. the content specified herein is for the purpose of introducing lapis semiconductor's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specifications, which can be obtained from lapis semiconductor upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. great care was taken in ensuring the accuracy of the information specified in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, lapis semiconductor shall bear no responsibility for such damage. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. lapis semiconductor does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by lapis semiconductor and other parties. lapis semiconductor shall bear no responsibility what soever for any dispute arising from the use of such technical information. the products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation eq uipment, communication devices, electronic appliances and amusement devices). the products specified in this document are not designed to be radiation tolerant. while lapis semiconductor always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any product, such as derating, redundancy, fire control and fail-safe designs. lapis semiconductor shall bear no responsibility whatsoever for your use of any product outside of the pr escribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a me dical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). lapis semiconductor shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specified herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law. copyright 2008 - 2011 lapis semiconductor co., ltd.


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